INDIVIDUALLY READ-ACCESSIBLE TWIN MEMORY CELLS

摘要

The present disclosure relates to a non-volatile memory on a semiconductor substrate, comprising: a first memory cell comprising a floating-gate transistor and a select transistor having an embedded vertical control gate, a second memory cell comprising a floating-gate transistor and a select transistor having the same control gate as the select transistor of the first memory cell, a first bit line coupled to the floating-gate transistor of the first memory cell, and a second bit line coupled to the floating-gate transistor of the second memory cell.

主权项

1. A non-volatile memory on a semiconductor substrate, comprising:
a first memory cell including a first floating-gate transistor and a select transistor electrically coupled to each other, the select transistor having a vertical control gate embedded in the substrate and a vertical channel region extending along a first face of the embedded vertical control gate, a second memory cell including a first floating-gate transistor and a select transistor electrically coupled to each other, the select transistor sharing the control gate of the select transistor of the first memory cell and having a vertical channel region that extends along a second face of the embedded vertical control gate that is on an opposite side of the control gate with respect to the first face, a first bit line electrically coupled to the first floating-gate transistor of the first memory cell, a second bit line electrically coupled to the first floating-gate transistor of the second memory cell, a first control gate line electrically coupled to a control gate of the first floating-gate transistor of the first memory cell, and a second control gate line electrically coupled to a control gate of the first floating-gate transistor of the second memory cell.