SEMICONDUCTOR DEVICE HAVING STRAINED FIN STRUCTURE AND METHOD OF MAKING THE SAME

摘要

A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure and at least a second active region to dispose the second fin structure. The first/second fin structure partially overlapped by the first/second gate has a first/second stress, and the first stress and the second stress are different from each other. The first/second source/drain region is disposed in the first/second fin structure at two sides of the first/second gate.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate comprising at least a first active region and at least a second active region; at least a first fin structure overall including at least two kinds of 4A group elements disposed in the first active region, wherein the overall first fin structure has a first stress, wherein the first fin structure is a single layer; and at least a second fin structure overall including at least two kinds of 4A group elements in addition to silicon disposed in the second active region, wherein a ratio of 4A group elements in the second fin structure is different from a ratio of 4A group elements in the first fin structure, the overall second fin structure has a second stress different from the first stress, and the second fin structure is a single layer.