| 发明名称 |
APPARATUS AND METHOD FOR PLACING STRESSORS WITHIN AN INTEGRATED CIRCUIT DEVICE TO MANAGE ELECTROMIGRATION FAILURES |
| 摘要 |
A method for selecting locations within an integrated circuit device for placing stressors to manage electromigration failures includes calculating an electric current for an interconnect within the integrated circuit device and determining an electromigration stress profile for the interconnect based on the electric current. The method further includes determining an area on the interconnect for placing a stressor to alter the electromigration stress profile for the interconnect. |
| 申请公布号 |
US2015348898(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414292886 |
申请日期 |
2014.05.31 |
| 申请人 |
Shroff Mehul D.;Reber Douglas M.;Travis Edward O. |
发明人 |
Shroff Mehul D.;Reber Douglas M.;Travis Edward O. |
| 分类号 |
H01L23/528;H01L21/768;H01L23/522;G06F17/50 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for selecting locations within an integrated circuit device for placing stressors to manage electromigration failures, the method comprising:
calculating an electric current for a first interconnect within the integrated circuit device; determining an electromigration stress profile for the first interconnect based on the electric current; and determining an area on the first interconnect for placing a stressor to alter the electromigration stress profile for the first interconnect. |
| 地址 |
Austin TX US |
