发明名称 UNDERFILL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material, including an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, the minimum melt viscosity being between 1000 Pa*s and 2000 Pa*s, and gradient of melt viscosity between 10° C. higher than the minimum melt viscosity attainment temperature and a temperature 10° C. higher being between 900 Pa*s/° C. and 3100 Pa*s/° C., is applied to a semiconductor chip having a solder-tipped electrode formed thereon, and the semiconductor chip is mounted onto a circuit substrate having a counter electrode opposing the solder-tipped electrode, and the semiconductor chip and the circuit substrate are thermocompressed under bonding conditions of raising the temperature from a first temperature to a second temperature at a predetermined rate.
申请公布号 US2015348858(A1) 申请公布日期 2015.12.03
申请号 US201414423821 申请日期 2014.09.10
申请人 DEXERIALS CORPORATION 发明人 KOYAMA Taichi
分类号 H01L23/29;H01L23/00;C08J5/18;H01L21/56 主分类号 H01L23/29
代理机构 代理人
主权项 1. An underfill material used under a bonding condition in which a temperature is increased at a predetermined rate from a first temperature to a second temperature, wherein the underfill material contains an epoxy resin, an acid anhydride, an acrylic resin and an organic peroxide, minimum melt viscosity of the underfill material ranges from 1000 Pa*s to 2000 Pa*s, and gradient of the melt viscosity from a temperature 10° C. higher than a minimum melt viscosity attainment temperature to a temperature 10° C. higher than the temperature ranges 900 Pa*s/° C. to 3100 Pa*s/° C.
地址 Tokyo JP