| 摘要 |
[Problem] TO provide a void forming composition whereby a sacrificial region comprising a sacrificial material completely decomposed and vaporized at a desired temperature can be formed, and a method for manufacturing a semiconductor device which uses the void forming composition. [Solution] A void forming composition characterized by including a solvent and a polymer including five or more of at least one type of repeating units represented by formula (1) or formula (2) (In the formulas, Ar1, Ar2, and Ar2' are each independently an unsubstituted or substituted aromatic group, and L1 through L2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, an alkyl, a sulfone, an amide, a ketone, or general formula (3) (in which Ar3 is an aromatic group, and L3 is a trivalent atom selected from the group consisting of nitrogen, boron, and phosphorus).) |
