WELL RESISTORS AND POLYSILICON RESISTORS

摘要

In described examples, an integrated circuit (100) containing a well resistor (110) has STI field oxide (108) and resistor dummy active areas (118) in the well resistor (110). STI trenches are etched and filled with trench fill dielectric material. The trench fill dielectric material is removed from over the active areas (118) by a CMP process, leaving STI field oxide (108) in the STI trenches. Subsequently, dopants are implanted into a substrate (102) in the well resistor area to form the well resistor (110).