发明名称 |
METHOD OF CLEANING BASE, METHOD OF HEAT TREATMENT OF SEMICONDUCTOR WAFER, AND METHOD OF MANUFACTURING SOLID STATE IMAGE PICKUP DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a technology advantageous for cleaning a base for supporting a processing object in a device for heat treating a semiconductor wafer.SOLUTION: There is provided a method of cleaning a base for supporting a processing object in a device performing heat treatment, where the base includes silicon carbide, and the method includes a first step of preparing a base having an oxide film and a second step of heat treating the base under a gas atmosphere including water vapor after the first step. |
申请公布号 |
JP2015216266(A) |
申请公布日期 |
2015.12.03 |
申请号 |
JP20140098887 |
申请日期 |
2014.05.12 |
申请人 |
CANON INC |
发明人 |
OGAWA TOSHIYUKI;UKIGAYA NOBUTAKA |
分类号 |
H01L21/02;H01L27/146 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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