发明名称 METHOD OF CLEANING BASE, METHOD OF HEAT TREATMENT OF SEMICONDUCTOR WAFER, AND METHOD OF MANUFACTURING SOLID STATE IMAGE PICKUP DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology advantageous for cleaning a base for supporting a processing object in a device for heat treating a semiconductor wafer.SOLUTION: There is provided a method of cleaning a base for supporting a processing object in a device performing heat treatment, where the base includes silicon carbide, and the method includes a first step of preparing a base having an oxide film and a second step of heat treating the base under a gas atmosphere including water vapor after the first step.
申请公布号 JP2015216266(A) 申请公布日期 2015.12.03
申请号 JP20140098887 申请日期 2014.05.12
申请人 CANON INC 发明人 OGAWA TOSHIYUKI;UKIGAYA NOBUTAKA
分类号 H01L21/02;H01L27/146 主分类号 H01L21/02
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