SEMICONDUCTOR DEVICE STRUCTURE

摘要

A semiconductor device structure includes a semiconductor substrate with an active region provided therein, a gate structure, a dummy gate structure and two contact regions provided in the active region for forming source and drain regions. The gate structure and the dummy gate structure are formed on the semiconductor substrate so as to partially overlie the active region, and one of the contact regions is located at one side of the dummy gate structure. The semiconductor device structure includes a contact structure contacting one of the contact regions and the dummy gate for connecting this contact region and the dummy gate to one of a Vdd rail and a Vss rail. The active region has an extension portion protruding laterally away from the active region relative to the other contact region, where the contact structure is located over the extension portion.

主权项

1. A semiconductor device structure, comprising:
a semiconductor substrate with an active region provided therein; a gate structure and a dummy gate structure, both of which are positioned above said semiconductor substrate so as to partially overlie said active region; two contact regions provided in said active region for forming source and drain regions, each of which being located at a respective one of two opposing sides of said gate structure, wherein one of said contact regions is further located at one side of said dummy gate structure; and a contact structure contacting said one of said contact regions and said dummy gate structure for connecting said one of said contact regions and said dummy gate structure with one of a Vdd rail and a Vss rail; wherein, in a top view of said active region, said active region has an extension portion protruding laterally away from said active region relative to said other contact region, and wherein said contact structure is located over said extension portion.