A MANUFACTURING METHOD OF A THIN FILM TRANSISTOR AND PIXEL UNIT THEREOF

摘要

The present invention provides a method of manufacturing a thin film transistor and a pixel unit thereof, comprising: forming a metal oxide layer, a gate insulating layer, a gate metal layer and an etching barrier layer on a substrate; through the same mask, etching a part of the etching barrier layer, the gate metal layer and the gate insulating layer on the substrate, while retaining: the metal oxide layer, the gate insulating layer, the gate metal layer and the etching barrier layer in a gate region, and the part of the metal oxide layer, the gate insulating layer and the gate metal layer in source and drain regions for forming contact vias; and exposing the remaining metal oxide layer in the source region and in the drain region; depositing a passivation layer, etching and metallizing the exposed oxide in the source and drain regions to form the source and drain contact vias.

主权项

1. A method of manufacturing a thin film transistor, characterized in that the method comprises the following steps:
forming a metal oxide layer, a gate insulating layer, a gate metal layer and an etching barrier layer on a substrate; etching, through a same mask, a part of the etching barrier layer, the gate metal layer and the gate insulating layer on the substrate, retaining: the metal oxide layer, the gate insulating layer, the gate metal layer and the etching barrier layer in a gate region, and a part of the metal oxide layer, the gate insulating layer and the gate metal layer in a source region and a drain region for forming contact vias; and exposing the remaining metal oxide layer in the source region and the drain region; metallizing the exposed part of the metal oxide layer in the source region and the drain region to form a part of a source and a drain, and then depositing a passivation layer; etching the passivation layer, the gate metal layer and the gate insulating layer in the source region and the drain region for forming contact vias, exposing a part of the metal oxide layer in the source region and the drain region for forming contact vias, thereby forming a source contact via and a drain contact via; metallizing the exposed part of the metal oxide layer in the source region and the drain region to connect them respectively with the formed part of the source and the drain for forming a complete source and drain; filling a conductive material into the source contact via and the drain contact via.