METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSING DEVICE

摘要

A method for manufacturing a solid-state image sensing device includes forming a first insulating film on a semiconductor substrate, planarizing the first insulating film, forming a second insulating film after the planarization, forming an opening in the first and the second insulating film, and forming an optical waveguide by forming a filling member in the opening. The thickness of the first insulating film is measured before the formation of the second insulating film, and the second insulating film is formed to a thickness according to the thickness of the first insulating film.

主权项

1. A method for manufacturing a solid-state image sensing device, the method comprising:
forming a first insulating film on a semiconductor substrate; planarizing the first insulating film; forming a second insulating film after the planarizing; forming an opening in the first insulating film and the second insulating film; and forming an optical waveguide by forming a filling member in the opening, wherein a thickness of the first insulating film is measured after the planarizing and before the forming of the second insulating film, and the second insulating film is formed to a thickness according to the thickness of the first insulating film.