发明名称 SEMICONDUCTOR DEVICE INCLUDING DIFFERENT ORIENTATIONS OF MEMORY CELL ARRAY AND PERIPHERAL CIRCUIT TRANSISTORS
摘要 A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.
申请公布号 US2015348987(A1) 申请公布日期 2015.12.03
申请号 US201514637538 申请日期 2015.03.04
申请人 LEE SUNG-HUN;PARK JONG-HO;LEE JOON-HEE;LEE HEE-JUENG 发明人 LEE SUNG-HUN;PARK JONG-HO;LEE JOON-HEE;LEE HEE-JUENG
分类号 H01L27/115;H01L29/04 主分类号 H01L27/115
代理机构 代理人
主权项 1. A semiconductor device, comprising: a semiconductor substrate comprising a <110> direction; a memory cell on a first region of the substrate; an active region in a second region neighboring the first region of the substrate, an extension direction of the active region having an acute angle with the <110> direction of the substrate; and a transistor serving as a peripheral circuit on the second region of the substrate.
地址 Yongin-si KR