发明名称 |
SEMICONDUCTOR DEVICE INCLUDING DIFFERENT ORIENTATIONS OF MEMORY CELL ARRAY AND PERIPHERAL CIRCUIT TRANSISTORS |
摘要 |
A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease. |
申请公布号 |
US2015348987(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514637538 |
申请日期 |
2015.03.04 |
申请人 |
LEE SUNG-HUN;PARK JONG-HO;LEE JOON-HEE;LEE HEE-JUENG |
发明人 |
LEE SUNG-HUN;PARK JONG-HO;LEE JOON-HEE;LEE HEE-JUENG |
分类号 |
H01L27/115;H01L29/04 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate comprising a <110> direction; a memory cell on a first region of the substrate; an active region in a second region neighboring the first region of the substrate, an extension direction of the active region having an acute angle with the <110> direction of the substrate; and a transistor serving as a peripheral circuit on the second region of the substrate. |
地址 |
Yongin-si KR |