| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes: providing a workpiece having a recess and a dielectric layer lining the recess; forming a conductive structure within the recess, wherein the conductive structure partially fills the recess; and recessing the dielectric layer, wherein, after the recessing, a top surface of the recessed dielectric layer is disposed within the recess. |
| 申请公布号 |
US2015348845(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414292048 |
申请日期 |
2014.05.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Yu Chao;Chang Ming-Ching;Chen Chao-Cheng |
| 分类号 |
H01L21/8234;H01L21/321;H01L21/3105;H01L29/66;H01L21/311 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
providing a workpiece having a recess and a dielectric layer lining the recess; forming a conductive structure within the recess, wherein the conductive structure partially fills the recess; and recessing the dielectric layer, wherein, after the recessing, a top surface of the recessed dielectric layer is disposed within the recess. |
| 地址 |
Hsin-Chu TW |
