METHODS OF FILLING HIGH ASPECT RATIO FEATURES WITH FLUORINE FREE TUNGSTEN

摘要

Provided herein are methods and apparatus for depositing and etching tungsten. The methods involve using tungsten chlorides (WClx) as both precursor and etchant. In some embodiments, the exposing the substrate to a WClx precursor and a reducing agent at a first set of conditions to deposit a first tungsten layer in a feature on a substrate; and exposing the substrate to a WClx precursor and a reducing agent at a second set of conditions to etch the first tungsten layer. According to various embodiments, transitioning from a deposition to etch regime can involve one or more of increasing a WClx flux, decreasing a temperature, and changing the WClx precursor. Also provided are related apparatus.

主权项

1. A method of depositing tungsten on a substrate, the method comprising:
exposing the substrate to a tungsten chloride (WClx) precursor and a reducing agent at a first set of conditions to deposit a first tungsten layer in a feature on a substrate by chemical vapor deposition (CVD); and exposing the substrate to a WClx precursor and the reducing agent at a second set of conditions to etch the first tungsten layer.