| 发明名称 |
METHOD FOR ELECTROCHEMICALLY DEPOSITING METAL ON A REACTIVE METAL FILM |
| 摘要 |
In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about −1 V to about −6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V. |
| 申请公布号 |
US2015348837(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514637290 |
申请日期 |
2015.03.03 |
| 申请人 |
APPLIED Materials, Inc. |
发明人 |
Shaviv Roey;Emesh Ismail T.;Argyris Dimitrios;Aksu Serdar |
| 分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for depositing metal on a reactive metal film on a workpiece, the method comprising:
electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about −1 V to about −6 V, wherein the workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V. |
| 地址 |
Santa Clara CA US |
