| 摘要 |
A photo-destroyable quencher has the structure;;wherein X, n, and R1-R6 are defined herein, and at least one of R2, R3, R4, R5, and R6 is halogen, nitro, C1-12 fluorinated alkyl, cyano, aldehyde, C2-20 ester, C2-20 ketone, C1-20 sulfoxyl hydrocarbyl, C1-20 sulfonyl hydrocarbyl, or sulfonamide. The photo-destroyable quencher exhibits improved solution stability and reduced hygroscopic properties relative to triphenylsulfonium phenolate. A photoresist composition including an acid-sensitive polymer, a photoacid generator, and the photo-destroyable quencher exhibits increased contrast and/or critical dimension uniformity relative to corresponding photoresist compositions comparative photo-destroyable quenchers. |
