发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a fine transistor with a high yield while suppressing gate insulator film shrinkage and damage.SOLUTION: A semiconductor device comprises: a semiconductor film on an insulating surface; a gate insulator on the semiconductor film; a gate electrode formed on the gate insulator and having a first metal film and a second metal film above the first metal film; and a metal oxide film formed on the gate insulator to be in contact with a side surface of the first metal film and having the same metal element as a metal element in the first metal film. The first metal film has larger ionization tendency than the second metal film. |
申请公布号 |
JP2015216402(A) |
申请公布日期 |
2015.12.03 |
申请号 |
JP20150160928 |
申请日期 |
2015.08.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
NODA KOSEI |
分类号 |
H01L21/336;H01L21/28;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/423;H01L29/49;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|