发明名称 |
Semiconductor Device and Display Device Including the Same |
摘要 |
Provided is a transistor which includes an oxide semiconductor film in a channel region. A change from a shift value before light irradiation to a shift value under light irradiation is greater than or equal to −1 V and less than or equal to 0.5 V, where the shift value is a gate voltage at a point of intersection of an axis of 1×10−12 A and a steepest tangent line of the logarithm of a drain current in drain current-gate voltage characteristics of the transistor, and where the light irradiation is performed on the oxide semiconductor film with light having an energy greater than or equal to a band gap of the oxide semiconductor film. |
申请公布号 |
US2015348998(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514721362 |
申请日期 |
2015.05.26 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Koezuka Junichi;JINTYOU Masami;KUROSAKI Daisuke;SHIMA Yukinori;OBONAI Toshimitsu |
分类号 |
H01L27/12;H01L21/44 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a transistor comprising an oxide semiconductor film in a channel region, wherein a change from a shift value before light irradiation to a shift value under light irradiation is greater than or equal to −1 V and less than or equal to 0.5 V, where the shift value is a gate voltage of the transistor at a point of intersection of an axis of 1×10−12 A and a steepest tangent line of a logarithm of a drain current in drain current-gate voltage characteristics of the transistor, and where the light irradiation is performed on the oxide semiconductor film with light having an energy greater than or equal to a band gap of the oxide semiconductor film. |
地址 |
Kanagawa-ken JP |