FIN FIELD-EFFCT TRANSISTORS AND FABRICATION METHOD THEREOF

摘要

A method for fabricating fin field-effect transistors includes providing a semiconductor substrate; and forming a plurality of fins on a surface of the semiconductor substrate. The method also includes forming dummy gates formed over side and top surfaces of the fins; forming a precursor material layer with a surface higher than top surfaces of the fins to cover the dummy gates and the semiconductor substrate; performing a thermal annealing process to convert the precursor material layer into a dielectric layer having a plurality of voids; and planarizing the dielectric layer to expose the top surfaces of the dummy gates. Further, the method also includes performing a post-treatment process using oxygen-contained de-ionized water on the planarized dielectric layer to eliminate the plurality of voids formed in the dielectric layer; removing the dummy gates to form trenches; and forming a high-K metal gate structure in each of the trenches.

主权项

1. A method for fabricating fin-field effect transistors, comprising:
providing a semiconductor substrate; forming a plurality of fins on a surface of the semiconductor substrate; forming dummy gates over side and top surfaces of the fins; forming a precursor material layer to cover the dummy gates and the semiconductor substrate; performing a thermal annealing process on the precursor material layer to convert the precursor material layer into a dielectric layer having a plurality of voids; planarizing the dielectric layer with the plurality of voids to expose top surfaces of the dummy gates; performing a post-treatment process using oxygen-contained de-ionized water onto the planarized dielectric layer to eliminate the plurality of voids formed in the dielectric layer; removing the dummy gates to form trenches in the dielectric layer without voids; and forming a high-K metal gate structure in each of the trenches.