Non-Volatile Ternary Content-Addressable Memory with Resistive Memory Device

摘要

A scheme for non-volatile ternary content-addressable memory with resistive memory device is proposed. The non-volatile ternary content-addressable memory comprises five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to the match line transistor; and a pair of variable resistances have a first variable resistance and a second variable resistance. The pair of search transistors is coupled to the pair of variable resistances.

主权项

1. A non-volatile ternary content-addressable memory with resistive memory device, comprising:
five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to said match line transistor; and a pair of variable resistances having a first variable resistance and a second variable resistance; wherein a second terminal of said pair of variable resistances is coupled to said read transistor, said write transistor and said match line transistor; wherein a first terminal of said first variable resistance is coupled to said first search transistor, and wherein a first terminal of said second variable resistance is coupled to said second search transistor.