发明名称 CONTROL CIRCUIT AND POWER SUPPLY CIRCUIT
摘要 A control circuit includes: a signal generating circuit configured to generate a PWM signal; and a drive control circuit configured to alternately turn on a first transistor and a second transistor in accordance with the PWM signal, the first transistor and the second transistor being connected in series between a wiring to which a first voltage is supplied and a wiring to which a reference potential is supplied. The drive control circuit turns on one of the first transistor and the second transistor when detecting that an electric potential of an N well of the first transistor or the second transistor in triple-well structure, connected to a wiring to which a second voltage lower than the first voltage is supplied via a resistor becomes lower than a threshold value after the other of the first transistor and the second transistor is turned off.
申请公布号 US2015349640(A1) 申请公布日期 2015.12.03
申请号 US201514700947 申请日期 2015.04.30
申请人 SOCIONEXT INC. 发明人 ITO Yuji
分类号 H02M3/158 主分类号 H02M3/158
代理机构 代理人
主权项 1. A control circuit, comprising: a signal generating circuit configured to generate a pulse width modulation signal; and a drive control circuit configured to alternately turn on a first transistor and a second transistor in accordance with the pulse width modulation signal, the first transistor and the second transistor being connected in series between a wiring to which a first voltage is supplied and a wiring to which a reference potential is supplied, wherein at least one of the first transistor and the second transistor is formed in a P well formed in an N well, and an N-type diffusion layer to be a source or a drain is formed in the P well, the N well is connected to a wiring to which a second voltage lower than the first voltage is supplied via a resistor, and the drive control circuit includes a first drive circuit configured to turn on one of the first transistor and the second transistor when detecting that an electric potential of the N well of the first transistor or the second transistor becomes lower than a first threshold value after the other of the first transistor and the second transistor is turned off.
地址 Yokohama-shi JP