| 发明名称 |
HYBRID PLANAR-MIXED HETEROJUNCTION FOR ORGANIC PHOTOVOLTAICS |
| 摘要 |
Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a HOMO energy and at least one acceptor material having a LUMO energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer. |
| 申请公布号 |
US2015349283(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201314646154 |
申请日期 |
2013.11.22 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF MICHIGAN Office Of Technology Transfer |
发明人 |
FORREST Stephen R.;ZIMMERMAN, Jeramy, D.;XIAO Xin |
| 分类号 |
H01L51/42;H01L51/00 |
主分类号 |
H01L51/42 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. An organic photosensitive optoelectronic device comprising:
two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a highest occupied molecular orbital (HOMO) energy and at least one acceptor material having a lowest unoccupied molecular orbital (LUMO) energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer. |
| 地址 |
Ann Arbor MI US |
