发明名称 |
Highly Reliable Nonvolatile Memory and Manufacturing Method Thereof |
摘要 |
The present invention relates to a highly reliable nonvolatile memory and a manufacturing method thereof. The nonvolatile memory comprises top electrodes, bottom electrodes and a resistive material layer disposed therebetween, wherein the top electrodes are positioned on top in the memory; the bottom electrodes are positioned on a substrate; metal oxide for forming the resistive material layer is doped with metal; and a metal oxygen storage layer is further disposed between the top electrodes and the resistive material layer. The manufacturing method adopts a method in which a doping method and a double-layer forming method are combined, so that the highly reliable and highly uniform resistive random access memory can be fabricated and accordingly the performance of the memory can be increased. |
申请公布号 |
US2015349253(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201314759624 |
申请日期 |
2013.09.30 |
申请人 |
PEKING UNIVERSITY |
发明人 |
Huang Ru;Yu Muxi;Cai Yimao;Bai Wenliang;Huang Yinglong |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile memory comprising: top electrodes, bottom electrodes and a resistive material layer disposed therebetween, wherein the top electrodes are positioned on top in the memory; the bottom electrodes are positioned on a substrate; metal oxide for forming the resistive material layer is doped with metal; and a metal oxygen storage layer is further disposed between the top electrodes and the resistive material layer. |
地址 |
Beijing CN |