LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE INCLUDING THE SAME

摘要

Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.

主权项

1. A light emitting device comprising:
a substrate including a base and a conductive pattern disposed over the base; and a light emitting diode mounted on the substrate, wherein the light emitting diode includes:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed under the first conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the light emitting structure is disposed to form openings exposing a corresponding portion of the first conductive type semiconductor layer;a first electrode forming ohmic contact with the first conductive type semiconductor layer through the exposed portion of the first conductive type semiconductor layer;a second electrode disposed under the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer;a first insulation layer partially covering the first electrode and the second electrode;a first bump and a second bump disposed under the light emitting structure and electrically connected to the first electrode and the second electrode, respectively through the conductive pattern; anda heat dissipation bump disposed under the light emitting structure and contacting the base, wherein at least one of the openings formed on the light emitting structure is disposed to form a connection structure connecting at least two other of the openings, the first bump, the second bump and the heat dissipation bump are separated from one another, and the heat dissipation bump has higher thermal conductivity than the first and second bumps.