| 主权项 |
1. A process for manufacturing a gas barrier film comprising:
(a) forming, on a substrate, an unmodified layer A which contains a silicon compound having a structure represented by the following General Formula (1),[Chemical Formula 1]
—[Si(R1)(R2)—N(R3)]n— General Formula (1) wherein R1, R2, and R3 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted vinyl group, or a substituted or unsubstituted (trialkoxysilyl)alkyl group, and n is an integer representing the number of a constitutional unit having the formula of —[Si(R1)(R2)—N(R3)]—; (b) forming a layer B which contains a compound having an oxygen element or a nitrogen element on the unmodified layer A; and (c) irradiating with vacuum ultraviolet ray from the layer B side to modify the unmodified layer A. |
