| 发明名称 |
SOFT POLISHING PAD FOR POLISHING A SEMICONDUCTOR SUBSTRATE |
| 摘要 |
Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D. |
| 申请公布号 |
US2015343595(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514823956 |
申请日期 |
2015.08.11 |
| 申请人 |
Allison William C.;Scott Diane;Kerprich Robert;Huang Ping;Frentzel Richard |
发明人 |
Allison William C.;Scott Diane;Kerprich Robert;Huang Ping;Frentzel Richard |
| 分类号 |
B24B37/24;C08G18/32;C08G18/76;B24B37/26;B24D11/00 |
主分类号 |
B24B37/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a soft polishing pad for polishing a semiconductor substrate, the method comprising:
mixing a pre-polymer, a primary curative, and a secondary curative different from the primary curative to form a mixture, wherein the primary curative is a diamine compound and the secondary curative is a diol compound; and curing the mixture to provide a homogeneous polishing body comprising a thermoset, closed cell polyurethane material having a hardness between about 20 Shore D and about 35 Shore D. |
| 地址 |
Beaverton OR US |
