发明名称 |
ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS |
摘要 |
An AlN crystal preparation method, in which: at least one element excluding Si is used that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN; a composition including at least Al and the element is melted; Al vapor and nitrogen gas are reacted at a prescribed reaction temperature; and AlN crystals are formed. |
申请公布号 |
WO2015182477(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
WO2015JP64605 |
申请日期 |
2015.05.21 |
申请人 |
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY |
发明人 |
UJIHARA, TORU;TAKEUCHI, YUKIHISA;CHEN, MINGYU;NAGAYA, MASASHI |
分类号 |
C30B29/38;C01B21/072;C30B29/62 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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