发明名称 ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS
摘要 An AlN crystal preparation method, in which: at least one element excluding Si is used that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN; a composition including at least Al and the element is melted; Al vapor and nitrogen gas are reacted at a prescribed reaction temperature; and AlN crystals are formed.
申请公布号 WO2015182477(A1) 申请公布日期 2015.12.03
申请号 WO2015JP64605 申请日期 2015.05.21
申请人 NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY 发明人 UJIHARA, TORU;TAKEUCHI, YUKIHISA;CHEN, MINGYU;NAGAYA, MASASHI
分类号 C30B29/38;C01B21/072;C30B29/62 主分类号 C30B29/38
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