| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the difference in characteristic between a transistor located at an end portion and a transistor located at the center can be reduced.SOLUTION: A semiconductor device has gate wires Gp1, Gp2 supplied with the same driving signal, a source region Sp1 provided in an area between the gate wires Gp1, Gp2 in plan view, a wire Lp1 which is formed on the source region Sp1 and supplies power source potential VDD to the source region Sp1, and a gate wire Gs which is formed in the same wire layer as the gate wires Gp1, Gp2, supplied with the power source potential VSS and formed on the source region Sp1. The difference in characteristic between a transistor located at an end portion and a transistor located at the center can be reduced while suppressing increase of the chip size. In addition, the gate wire covering the source region functions as a compensation capacitor, so that the semiconductor device can contribute to stabilization of the power source. |
