POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD

摘要

One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the polishing liquid for CMP has a half-value width of the main peak appearing in the 2θ = 27.000-29.980º range on the powder x-ray diffraction chart of these cerium oxide particles of 0.26-0.36º, the average particle size of these cerium oxide particles is from 130 nm to less than 175 nm, and the number of cerium oxide particles having a size of 1.15 μm or greater is 5000×103/mL or less.