发明名称 No details present
摘要 An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.
申请公布号 GB201518344(D0) 申请公布日期 2015.12.02
申请号 GB20150018344 申请日期 2013.06.28
申请人 INTEL CORPORATION 发明人
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代理机构 代理人
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