スーパージャンクションパワー半導体デバイス,申请号JP20090547212-传众专利搜索

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发明名称	スーパージャンクションパワー半導体デバイス
摘要	<p>A superjunction power semiconductor device which includes spaced drift regions each extending from the bottom of a respective gate trench to the substrate of the device.</p>
申请公布号	JP5827785(B2)	申请公布日期	2015.12.02
申请号	JP20090547212	申请日期	2007.04.13
申请人	シリコニクステクノロジーシー．ブイ．	发明人	キンザー、ダニエルエム．
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
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