| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an insulating material which is useful for a semiconductor device and contains a reduced amount of volatile components to avoid generation of dust during heat curing. <P>SOLUTION: An insulating material contains a curable component (A) containing a polysiloxane condensate having a polycondensation structure site derived from a silane compound represented by a general formula (1): R<SP POS="POST">1</SP><SB POS="POST">n</SB>SiX<SP POS="POST">1</SP><SB POS="POST">4-n</SB>, where R<SP POS="POST">1</SP>is a hydrogen atom or a C1-C10 hydrocarbon group, X<SP POS="POST">1</SP>is a halogen atom, a C1-C6 alkoxy group or an acetoxy group, if there are multiple kinds of R<SP POS="POST">1</SP>and X<SP POS="POST">1</SP>, they are each independent, and n is an integer from 0 to 3. The insulating material also contains a C1-C20 nitrogen-containing compound (B) of 16 to 50,000 mass ppm inclusive. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
