发明名称 |
INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE |
摘要 |
Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam. |
申请公布号 |
US2015344293(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514821997 |
申请日期 |
2015.08.10 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
HARAME David L.;STAMPER Anthony K. |
分类号 |
B81B3/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
1. A structure, comprising:
a single crystalline beam formed from a silicon layer of an silicon on insulator (SOI) substrate; insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in bulk substrate of the SOI substrate, below the single crystalline beam and a BOX layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on the single crystalline beam. |
地址 |
George Town KY US |