| 摘要 |
<p>The method includes the steps of: a) providing first and second layers, each including a bonding surface, at least one of said layers including recesses and the bonding surface of one of the two layers being formed at least partially of a silicon oxide film; b) bringing the bonding surfaces into contact with one another, such as to create a direct bonding interface; c) filling at least one recess with a fluid including water molecules; and d) applying a thermal budget such as to generate bond annealing. Further relating to a structure including a direct bonding interface between two bonding surfaces of two layers, the bonding surface of at least one of the layers being formed at least partially of a silicon oxide film, and the direct bonding interface includes recesses filled with a fluid including water molecules.</p> |
