发明名称 |
3D MEMORY |
摘要 |
Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension. |
申请公布号 |
EP2948983(A1) |
申请公布日期 |
2015.12.02 |
申请号 |
EP20140743125 |
申请日期 |
2014.01.23 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
HOPKINS, JOHN;FAN, DARWIN FRANSEDA;SIMSEK-EGE, FATMA ARZUM;BRIGHTEN, JAMES;MAURI, AURELIO GIANCARLO;JAYANTI, SRIKANT |
分类号 |
H01L27/115;H01L21/28;H01L29/423;H01L29/66;H01L29/788 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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