发明名称 |
SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD |
摘要 |
<p>In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region (10D) and a second region (10U) obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.</p> |
申请公布号 |
EP2544220(A4) |
申请公布日期 |
2015.12.02 |
申请号 |
EP20110750815 |
申请日期 |
2011.03.04 |
申请人 |
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA;DISCO CORPORATION |
发明人 |
AIDA, HIDEO;AOTA, NATSUKO;HOSHINO, HITOSHI;FURUTA, KENJI;HAMAMOTO, TOMOSABURO;HONJO, KEIJI |
分类号 |
H01L21/20;C30B29/20;C30B33/02;C30B33/04;H01L21/268;H01L29/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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