发明名称 REDUCED RESIDUAL FORMATION IN ETCHED MULTI-LAYER STACKS
摘要 <p>A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.</p>
申请公布号 EP2188831(B1) 申请公布日期 2015.12.02
申请号 EP20080795566 申请日期 2008.08.25
申请人 CANON NANOTECHNOLOGIES, INC.;MOLECULAR IMPRINTS, INC. 发明人 XU, FRANK, Y.;LIU, WEIJUN;BROOKS, CYNTHIA, B.;LABRAKE, DWAYNE, L.;LENTZ, DAVID., J.
分类号 H01L21/302;B82Y10/00;B82Y40/00;G03F7/00;G03F7/027;H01L21/461 主分类号 H01L21/302
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