| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To efficiently obtain a chip of a stable quality. <P>SOLUTION: A semiconductor substrate cutting method comprises: attaching a backgrind tape to a surface of a wafer W (step S1); radiating laser beams to the inside of the wafer W to form a modified region along a cutting line S at a depth of approximately 60μm-80μm from the surface of the wafer W (step S2); grinding the wafer W from a rear face to a reference plane at approximately 50μm from the surface of the wafer W (step S3). At this time, cracks in the modified region progress to between the reference plane and the surface of the wafer W. The semiconductor substrate cutting method further comprises: subsequently, removing a damaged surface layer formed on the rear face of the wafer W by grinding and performing mirror-finishing on the rear face of the wafer W (step S4); attaching an expand tape to the rear face of the wafer W (step S5); tearing the wafer W placed on an elastic body 212 by pressing the wafer W with a pressing member 218 (step S6); detaching the backgrind tape (step S7); and expanding the expand tape E outward to separate chips C (step S8). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
