发明名称 CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
摘要 <p>The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.</p>
申请公布号 EP2825609(A4) 申请公布日期 2015.12.02
申请号 EP20130761482 申请日期 2013.03.14
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 REISS, BRIAN;WHITENER, GLENN
分类号 C09K3/14;H01L21/3105;H01L21/321 主分类号 C09K3/14
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