| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor device in which "lowering of reverse breakdown voltage due to aerial discharge" can be minimized when compared with a conventional high breakdown voltage semiconductor device 900, without causing upsizing of the high breakdown voltage semiconductor device. <P>SOLUTION: The high breakdown voltage semiconductor device 100 comprises: an n-type semiconductor layer 110 composed of silicon carbide; a first electrode layer 128 consisting of a barrier metal; a second electrode layer 130; a p-type resurf layer 116; a p<SP POS="POST">+</SP>-type edge termination layer 120; a p+-type first guard ring layer 122 formed at a position surrounding the periphery of the edge termination layer 120 while spaced apart therefrom in the resurf layer 116; a p-type second guard ring layer 118 formed at a position surrounding the periphery of the resurf layer 116 on the surface of the semiconductor layer 110; and an insulation layer 124 formed in a region surrounding the first electrode layer 128 on the surface of the semiconductor layer 110. The second guard ring layer 118 is formed up to the vicinity of the outer periphery of the insulation layer 124. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
