| 摘要 |
<p>A vertical cavity surface emitting laser includes a semiconductor substrate, a first semiconductor multilayer film reflector of a first conductivity type laminated on the semiconductor substrate, a resonator, and a second semiconductor multilayer film reflector of a second conductivity type laminated on the resonator. In each of the first and second semiconductor multilayer film reflectors, a pair of a high-refractive-index layer and a low-refractive-index layer is stacked. The resonator includes an active layer laminated on the first semiconductor multilayer film reflector. The resonator includes a pair of spacer layers and a resonator extending region. A composition of at least a layer included in the resonator extending region is different from any of compositions of the semiconductor substrate, the first semiconductor multilayer film reflector, and the second semiconductor multilayer film reflector.</p> |
