| 摘要 |
<p>A multi-bit non-volatile memory device comprises a memory cell array (225) including a plurality of memory cells; a storage unit (240) electrically coupled to the memory cell array (225), wherein the memory device is configured to program a first bit of multi-bit data from the storage unit (240) into one of the plurality of memory cells in the memory cell array (225) and program a second bit of multi-bit data from the storage unit (240) into one of the plurality of memory cells in the memory cell array (225) using data inversion.</p> |
