| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer which has a little crack and excellent flatness, and to provide a semiconductor device and a method for manufacturing the semiconductor wafer and the semiconductor device. <P>SOLUTION: In the semiconductor wafer which includes a substrate 2, a buffer region 3 which is arranged on one main surface of the substrate 2 and is formed of a compound semiconductor, and a main semiconductor region 4 which is arranged on the buffer region 3 and is formed of the compound semiconductor, the buffer region 3 includes a first multilayer structure buffer region 5, and a second multilayer structure buffer region 8 arranged between the substrate and the first multilayer structure buffer region 5. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
