发明名称 HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE HARDMASK COMPOSITION
摘要 A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom% to about 40 atom% of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom% or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.
申请公布号 EP2950334(A1) 申请公布日期 2015.12.02
申请号 EP20150169702 申请日期 2015.05.28
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 KIM, SANGWON;SHIN, HYEONJIN;PARK, SEONGJUN
分类号 H01L21/308;C01B31/02 主分类号 H01L21/308
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