| 摘要 |
The present invention relates to a thin film transistor array substrate and a manufacturing method thereof, capable of improving light efficiency by removing a gate insulation film and an interlayer insulation film in a penetration area. The thin film transistor array substrate includes: a substrate having the penetration area and a non-penetration area; a semiconductor layer formed on the non-penetration are of the substrate and including a channel area, a source area included on one side of the channel area, and a drain area included on the other side of the channel area; the gate insulation film formed on the semiconductor layer and exposing the edges of the source area and the drain area and the penetration area; a gate electrode formed on the gate insulation film to overlap the channel area; the interlayer insulation film covering the gate electrode and formed in the same pattern as the gate insulation film; and a source electrode and a drain electrode formed on the interlayer insulation film and directly coming into contact with the side of the source area and the drain area exposed by the interlayer insulation film and the gate insulation film. |
