发明名称 自己組織化方法及びそれを使用したエピタキシャル成長方法
摘要 <P>PROBLEM TO BE SOLVED: To grow a single crystalline epitaxial layer on non-single crystalline substrates such as a glass and a ceramic. <P>SOLUTION: A self-organization method for preparing an underlayer that is lattice-matched with a single crystalline thin film to be subjected to crystalline growth includes: a step of applying a solution comprising an organic-inorganic hybrid material on the non-single crystalline substrate; and a step of treating the organic-inorganic hybrid material applied on the substrate at predetermined temperature and under an atmosphere, so that regularly-arranged lattices are voluntarily produced. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5825515(B2) 申请公布日期 2015.12.02
申请号 JP20110176253 申请日期 2011.08.11
申请人 株式会社ブイ・テクノロジー 发明人 工藤 修二;水村 通伸;梶山 康一
分类号 C30B25/18;C23C16/02;C23C16/42;C30B29/18;H01L33/32 主分类号 C30B25/18
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