| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid state imaging element semiconductor substrate applied to manufacturing of a solid state imaging element, which can achieve thinning of a film with high accuracy without an end point detection part remaining in the solid state imaging element after manufacturing and without a problem of diffusion and the like to a semiconductor element part. <P>SOLUTION: A solid state imaging element semiconductor substrate to which backside processing from a rear face side with leaving a surface layer part on a surface side that is to be an element part formation region is applied, comprises: the surface layer part on the surface side that is to be the element part formation region; a first bulk layer formed more inside than the surface layer part in a direction toward the rear face side and to which backside processing at a BMD density of not less than 1×10<SP POS="POST">10</SP>/cm<SP POS="POST">3</SP>and not more than 1×10<SP POS="POST">12</SP>/cm<SP POS="POST">3</SP>is applied; and a second bulk layer formed more inside than the first bulk layer in a direction toward the rear face side and to which backside processing at a BMD density lower than that for the first bulk layer of not less than 1×10<SP POS="POST">9</SP>/cm<SP POS="POST">3</SP>and not more than 1×10<SP POS="POST">10</SP>/cm<SP POS="POST">3</SP>is applied. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
