发明名称 PZT強誘電体薄膜の製造方法
摘要 <p>A method for producing a ferroelectric thin film (14) comprises: coating a composition for forming a ferroelectric thin film on a substrate having a substrate body (10) and a base electrode (11) that has crystal daces oriented in the (111) direction, wherein the method includes formation of an orientation controlling layer (13) by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.</p>
申请公布号 JP5828293(B2) 申请公布日期 2015.12.02
申请号 JP20120073404 申请日期 2012.03.28
申请人 三菱マテリアル株式会社 发明人 渡辺 敏昭;桜井 英章;曽山 信幸;土井 利浩
分类号 H01L21/8246;H01B3/00;H01B3/12;H01L21/316;H01L27/105;H01L41/187;H01L41/318;H01L41/319 主分类号 H01L21/8246
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