发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of -10° to +10° with respect to an a-plane of the sapphire substrate in the plan view. |
申请公布号 |
EP2950356(A1) |
申请公布日期 |
2015.12.02 |
申请号 |
EP20150169765 |
申请日期 |
2015.05.29 |
申请人 |
NICHIA CORPORATION |
发明人 |
SHIMOOKA, TOMOHIRO;SANO, MASAHIKO;AZUMA, NAOKI |
分类号 |
H01L33/22;H01L33/32 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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