发明名称 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ
摘要 <p>Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.</p>
申请公布号 JP5826353(B2) 申请公布日期 2015.12.02
申请号 JP20140202833 申请日期 2014.10.01
申请人 ラム リサーチ コーポレーションLAM RESEARCH CORPORATION 发明人 フィッシャー, アンドレアス;ディーンドサ, ラージンダー
分类号 H01L21/3065;C23C16/455;C23C16/50;H01L21/205 主分类号 H01L21/3065
代理机构 代理人
主权项
地址