| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a solid-state image sensor which is capable of suppressing surface defects caused by a film stress difference at an interface of each layer and is excellent in condensing characteristics.SOLUTION: The solid-state image sensor comprises: a photoelectric conversion part 12 formed in a semiconductor substrate 11; light transmission insulating layers 17 and 18; a first flattening layer 19; a color filter 20 having a step on its surface; a second flattening layer 21 made of an organic material; a stress relaxation layer 22; a microlens layer 23 made of an inorganic material; and a transparent resin layer 24. The film stresses of the microlens layer 23, the stress relaxation layer 22, and the second flattening layer 21 satisfy a relation of (the film stress of the microlens layer 23)>(the film stress of the stress relaxation layer 22)>(the film stress of the second flattening layer 21). The refractive index of the transparent resin layer 24 is smaller than that of the microlens layer 23.</p> |
